公开(公告)号：US11148978B2

公开(公告)日：2021-10-19

申请号：US16493859

申请日：2018-02-23

申请人： IHI AEROSPACE CO., LTD.

发明人： Michimasa Uda ,  Hiroshi Yamauchi ,  Haruhiko Soeda

IPC分类号： C04B35/80 ,  C04B35/571

摘要： A method for producing a silicon-carbide-based composite. In the production of a silicon-carbide-based composite comprising a carbon-fiber-reinforced/silicon carbide composite (a C/SiC composite) or a silicon-carbide-fiber-reinforced/silicon carbide composite (a SiC/SiC composite), a film boiling method is carried out, using an organosilicon polymer having a chlorine-free polysilane skeleton and/or a chlorine-free polycarbosilane skeleton. The organosilicon polymer is in a liquid form at room temperature. The molar ratio of Si and C in the matrix of the C/SiC composite or the SiC/SiC composite is Si:C=1:1.08 to 1:1.43.