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公开(公告)号:US20210080176A1
公开(公告)日:2021-03-18
申请号:US17108456
申请日:2020-12-01
Applicant: IHI CORPORATION
Inventor: Hiroyuki KIMURA , Satoshi SEO , Shinsuke MATSUNO , Tomoya MURAMOTO
IPC: F25J3/02
Abstract: An unsaturated hydrocarbon production apparatus includes: a light collecting device configured to collect sunlight, and to convert the sunlight into solar heat; and a heating furnace configured to heat a raw material gas containing at least any one selected from the group consisting of methane and hydrogen, methane and oxygen, and ethane with the solar heat generated by the light collecting device to 700° C. or more and 2,000° C. or less.
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公开(公告)号:US20170027088A1
公开(公告)日:2017-01-26
申请号:US15288468
申请日:2016-10-07
Applicant: IHI Corporation
Inventor: Hiroyuki KIMURA , Shinsuke MATSUNO , Noriko MORIOKA , Naoki SEKI
CPC classification number: H05K7/20863 , B64D13/08 , B64D47/00 , B64D2013/0614 , H05K7/20881 , Y02T50/44 , Y02T50/56
Abstract: A cooling device applicable to an airplane having a pressurized cabin and a ram air channel for cooling an electronic device arranged in the pressurized cabin, is comprised of a partition wall separating the pressurized cabin from the ram air channel; and a heat exchanger thermally in contact with the electronic device and exposed to the ram air channel so as to radiate heat to a ram air.
Abstract translation: 适用于具有加压舱和用于冷却设置在加压舱内的电子装置的冲压空气通道的飞机的冷却装置包括将加压舱与冲压空气通道分开的分隔壁; 以及与电子设备接触并且暴露于冲压空气通道以热辐射到冲压空气的热交换器。
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公开(公告)号:US20210086157A1
公开(公告)日:2021-03-25
申请号:US17108616
申请日:2020-12-01
Applicant: IHI CORPORATION
Inventor: Hiroyuki KIMURA , Tomoya MURAMOTO , Satoshi SEO
IPC: B01J10/00 , C01B3/38 , C01B32/164 , F24S20/30
Abstract: A hydrogen production apparatus includes: a first furnace configured to heat a mixed gas of a raw material gas, which contains at least methane, and hydrogen to 1,000° C. or more and 2,000° C. or less; and a second furnace configured to accommodate a catalyst for accelerating a reaction of a first gas generated in the first furnace to a nanocarbon material, and to maintain the first gas at 500° C. or more and 1,200° C. or less.
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