公开(公告)号：US11445129B2

公开(公告)日：2022-09-13

申请号：US16979144

申请日：2018-05-25

申请人： IMASENIC ADVANCED IMAGING, S.L.

发明人： Renato Andrea Danilo Turchetta ,  Michele Sannino ,  Adrià Bofill

IPC分类号： G01T1/24 ,  H04N5/32 ,  H04N5/378 ,  H04N5/355

摘要： A low leakage binned pixel is provided. The pixel comprises a photodiode, a bin transistor and an output amplifier circuit. The photodiode has an anode and a cathode, the anode to collect electrons generated by light or by other form of ionising radiation, e.g. electrons. The bin transistor has a first terminal coupled to the cathode of the photodiode; a second terminal, configured to be coupled to a first terminal of a voltage reset switch (VRST) transistor; and a gate, configured to be coupled to a controller to receive a bin signal. The output amplifier circuit has an input and an output, wherein the input is coupled to the cathode of the photodiode and to the second terminal of the bin transistor. A multi-pixel binned circuit, an image sensor and a camera are also provided.