公开(公告)号：US20210005444A1

公开(公告)日：2021-01-07

申请号：US16919102

申请日：2020-07-01

Applicant: IMEC VZW

Inventor： Hu LIANG ,  Lan PENG

IPC: H01L21/02 ,  H01L29/20

Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a silicon on nitride, SON, substrate. The method comprises the steps of providing a semiconductor layer of a first crystal orientation, forming, on the semiconductor layer, an interface layer comprising a monocrystalline III-nitride layer forming a nucleation layer for a subsequent epitaxy process, and bonding a silicon substrate of a second crystal orientation with the interface layer.