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公开(公告)号：US20220181145A1
公开(公告)日：2022-06-09
申请号：US17369709
申请日：2021-07-07
Applicant: IMEC VZW
Inventor： Jacopo Franco , Jean-Francois de Marneffe , Tibor Grasser
IPC: H01L21/02
Abstract: A method for improving a bias temperature instability of a SiO2 layer comprises exposing the SiO2 layer to atomic hydrogen.
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公开(公告)号：US12009204B2
公开(公告)日：2024-06-11
申请号：US17369709
申请日：2021-07-07
Applicant: IMEC VZW
Inventor： Jacopo Franco , Jean-Francois de Marneffe , Tibor Grasser
IPC: H01L21/02
CPC classification number: H01L21/0234 , H01L21/02164
Abstract: A method for improving a bias temperature instability of a SiO2 layer comprises exposing the SiO2 layer to atomic hydrogen.
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