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公开(公告)号:US09041162B2
公开(公告)日:2015-05-26
申请号:US14188234
申请日:2014-02-24
Applicant: Infineon Technologies AG
Inventor: Giuseppe Miccoli , Bhaskaran Jayachandran , Friedrich Steffen , Alfred Vater
CPC classification number: H01L23/544 , G03F7/70625 , G03F7/70683 , G03F9/7084 , H01L21/78 , H01L22/34 , H01L23/562 , H01L23/585 , H01L2223/5446 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
Abstract: A wafer includes a plurality of chips, each of the chips being spaced from each other by kerf-line regions including a reduced width.
Abstract translation: 晶片包括多个芯片,每个芯片通过包括减小的宽度的切线区域彼此间隔开。
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公开(公告)号:US20140329373A1
公开(公告)日:2014-11-06
申请号:US14332120
申请日:2014-07-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: Giuseppe Miccoli , Adolf Koller , Jayachandran Bhaskaran
IPC: H01L21/78
CPC classification number: H01L21/78 , B23K26/032 , B23K26/042 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50
Abstract: A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with a laser beam to locally modify the substrate between a bottom of the trench structure and a second main surface of the substrate opposite to the first main surface.
Abstract translation: 切割半导体晶片的方法包括在基板的第一主表面上形成层叠体。 根据限定预定切割位置的图案蚀刻层叠层和基板的一部分以获得沟槽结构。 用激光束照射衬底以局部地修改沟槽结构的底部和与第一主表面相对的衬底的第二主表面之间的衬底。
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公开(公告)号:US20140167226A1
公开(公告)日:2014-06-19
申请号:US14188234
申请日:2014-02-24
Applicant: INFINEON TECHNOLOGIES AG
Inventor: Giuseppe Miccoli , Bhaskaran Jayachandran , Friedrich Steffen , Alfred Vater
IPC: H01L23/544
CPC classification number: H01L23/544 , G03F7/70625 , G03F7/70683 , G03F9/7084 , H01L21/78 , H01L22/34 , H01L23/562 , H01L23/585 , H01L2223/5446 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
Abstract: A wafer includes a plurality of chips, each of the chips being spaced from each other by kerf-line regions including a reduced width.
Abstract translation: 晶片包括多个芯片,每个芯片通过包括减小的宽度的切线区域彼此间隔开。
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