公开(公告)号：US12154980B2

公开(公告)日：2024-11-26

申请号：US17671562

申请日：2022-02-14

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Yi-Lun Chou ,  Shuang Gao ,  Chuangang Li

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L21/76 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a lattice layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The lattice layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The lattice layer comprises a plurality of first III-V layers and second III-V layers alternatively stacked. Each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region. The high resistivity region comprises more metal oxides than the current aperture so as to achieve a resistivity higher than that of the current aperture. At least two of the first III-V layers have the same group III element at different concentrations.