公开(公告)号：US20190173452A1

公开(公告)日：2019-06-06

申请号：US16323665

申请日：2016-09-30

Applicant: INTEL CORPORATION

Inventor： BRUCE A. BLOCK ,  SANSAPTAK DASGUPTA ,  PAUL B. FISCHER ,  HAN WUI THEN ,  MARKO RADOSAVLJEVIC

IPC: H03H9/56 ,  H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17

Abstract: Techniques are disclosed for forming resonator devices using epitaxially grown piezoelectric films. Given the epitaxy, the films are single crystal or monocrystalline. In some cases, the piezoelectric layer of the resonator device may be an epitaxial III-V layer such as an Aluminum Nitride, Gallium Nitride, or other group III material-nitride (III-N) compound film grown as a part of a single crystal III-V material stack. In an embodiment, the III-V material stack includes, for example, a single crystal AlN layer and a single crystal GaN layer, although any other suitable single crystal piezoelectric materials can be used. An interdigitated transducer (IDT) electrode is provisioned on the piezoelectric layer and defines the operating frequency of the filter. A plurality of the resonator devices can be used to enable filtering specific different frequencies on the same substrate (by varying dimensions of the IDT electrodes).