公开(公告)号：US20180358406A1

公开(公告)日：2018-12-13

申请号：US15778603

申请日：2015-12-24

Applicant: INTEL CORPORATION

Inventor： Bruce A. BLOCK ,  Paul B. FISCHER ,  Nebil TANZI ,  Gregory CHANCE ,  Han Wui THEN ,  Sansaptak DASGUPTA ,  Marko RADOSAVLJEVIC

IPC: H01L27/20 ,  H03H9/17 ,  H03H3/02 ,  H03H9/56 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

Abstract: Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.