公开(公告)号：USRE45814E1

公开(公告)日：2015-11-24

申请号：US13950481

申请日：2013-07-25

Applicant: INTERSIL AMERICAS INC.

Inventor： James D. Beasom

IPC: H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L27/0922 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0852 ,  H01L29/1083 ,  H01L29/7816 ,  H01L29/7835

Abstract: In accordance with an embodiment of the invention, there is an integrated circuit device having a complementary integrated circuit structure comprising a first MOS device. The first MOS device comprises a source doped to a first conductivity type, a drain extension doped to the first conductivity type separated from the source by a gate, and an extension region doped to a second conductivity type underlying at least a portion of the drain extension adjacent to the gate. The integrated circuit structure also comprises a second complementary MOS device comprising a dual drain extension structure.