SIMULTANEOUS ETCHING OF MULTI-FACETED SUBSTRATES

    公开(公告)号:US20250087472A1

    公开(公告)日:2025-03-13

    申请号:US18367759

    申请日:2023-09-13

    Applicant: INTEVAC, INC.

    Abstract: In an apparatus and related method, a substrate that has multiple facets is held in a chamber of a plasma reactor that has multiple plasma cavities. The substrate is positioned by a transport arrangement with each plasma cavity of the plasma reactor aligned to a facet of the substrate. A plasma is generated in each plasma cavity, to apply simultaneous plasma processing to multiple facets of the substrate.

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