公开(公告)号：US12234546B2

公开(公告)日：2025-02-25

申请号：US18000789

申请日：2021-06-04

Applicant: IONICS SA

Inventor： Fabien Monteverde ,  Thomas Godfroid ,  Luc Langer ,  Fabian Renaux

IPC: C23C14/48 ,  C22C5/02 ,  C23C14/14 ,  H01R13/03

Abstract: A gold nickel layer may comprise nitrogen inserted over a thickness equal to or greater than 0.20 nm, characterized in that the atomic concentration of gold is at least 15% over said thickness, the atomic concentration of nickel is at least 10% over said thickness and the atomic concentration of nitrogen is at least 5% over said thickness. A connector may comprise a portion of a surface which comprises such a gold nickel layer. A process for treating a gold nickel layer may comprise a step of implantation of nitrogen ions, emitted by an energy source of at least 20 keV, and wherein the implanted nitrogen ions are multi-energy ions.