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1.发明申请Exchange-Bias Based Multi-State Magnetic Memory And Logic Devices And Magnetically Stabilized Magnetic Storage 有权基于交换偏压的多状态磁存储器和逻辑器件和磁稳定磁存储公开(公告)号：US20080084627A1
公开(公告)日：2008-04-10
申请号：US11632335
申请日：2005-07-13
申请人： Igor V. Roshchin , Oleg Petracic , Rafael Morales , Zhi-Pan Li , Xavier Batlle , Ivan K. Schuller
发明人： Igor V. Roshchin , Oleg Petracic , Rafael Morales , Zhi-Pan Li , Xavier Batlle , Ivan K. Schuller
IPC分类号： G11B5/02
CPC分类号： G11C11/5607 , B82Y10/00 , G11B5/02 , G11B5/66 , G11B9/14 , G11B11/10504 , G11B11/10528 , G11B11/10584 , G11B11/10586 , G11B2005/0002 , G11B2005/0021 , G11C7/04 , G11C11/161 , G11C11/1675
摘要： Magnetic materials and methods for using ferromagnetic and antiferromagnetic coupling and exchange bias for binary and multistate magnetic memory device.
摘要翻译： 用于二进制和多态磁存储器件的铁磁和反铁磁耦合和交换偏压的磁性材料和方法。
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2.发明授权Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage 有权基于交换偏压的多态磁存储器和逻辑器件以及磁稳定磁存储器公开(公告)号：US07764454B2
公开(公告)日：2010-07-27
申请号：US11632335
申请日：2005-07-13
申请人： Igor V. Roshchin , Oleg Petracic , Rafael Morales , Zhi-Pan Li , Xavier Batlle , Ivan K. Schuller
发明人： Igor V. Roshchin , Oleg Petracic , Rafael Morales , Zhi-Pan Li , Xavier Batlle , Ivan K. Schuller
IPC分类号： G11B5/02
CPC分类号： G11C11/5607 , B82Y10/00 , G11B5/02 , G11B5/66 , G11B9/14 , G11B11/10504 , G11B11/10528 , G11B11/10584 , G11B11/10586 , G11B2005/0002 , G11B2005/0021 , G11C7/04 , G11C11/161 , G11C11/1675
摘要： Magnetic materials and methods for using ferromagnetic and antiferromagnetic coupling and exchange bias for binary and multistate magnetic memory device.
摘要翻译： 用于二进制和多态磁存储器件的铁磁和反铁磁耦合和交换偏压的磁性材料和方法。
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