公开(公告)号：US20080132030A1

公开(公告)日：2008-06-05

申请号：US11950306

申请日：2007-12-04

申请人： Il-Young YOON ,  Dong-Suk SHIN ,  Jae-Ouk CHOO ,  Ja-Eung KOO

发明人： Il-Young YOON ,  Dong-Suk SHIN ,  Jae-Ouk CHOO ,  Ja-Eung KOO

IPC分类号： H01L21/762

CPC分类号： H01L21/31053 ,  H01L21/76224

摘要： After sequentially forming an insulating layer and a capping dielectric layer having a higher density than the insulating layer, a chemical mechanical polishing (CMP) process is performed to prevent scratch from being formed on the surface of the insulating layer at the early stage of the CMP process. Thus, a semiconductor device with improved reliability is achieved.

摘要翻译： 在顺序地形成具有比绝缘层更高的密度的绝缘层和封盖电介质层之后，进行化学机械抛光（CMP）工艺以防止在CMP的早期在绝缘层的表面上形成划痕 处理。 因此，实现了可靠性提高的半导体器件。