公开(公告)号：US20100022037A1

公开(公告)日：2010-01-28

申请号：US12506699

申请日：2009-07-21

Applicant: In-Bae Cho

Inventor： In-Bae Cho

IPC: H01L31/18 ,  H01L21/66

CPC classification number: H01L27/14683 ,  H01L21/02063

Abstract: A method for fabricating a CMOS image sensor includes developing a semiconductor substrate provided with metal pads with tetramethylammonium hydroxide (TMAH), to etch the metal pads. In accordance with the method, it is possible to realize normal output of materials, which were previously scrapped due to problems including pad corrosion, appearance defects and bonding pad issues which may occur in the process of fabricating CMOS image sensors. As a result, advantageously, it is possible to reduce wafer scrap and improve product yield.

Abstract translation: 一种制造CMOS图像传感器的方法包括用四甲基氢氧化铵（TMAH）将具有金属焊盘的半导体衬底开发以蚀刻金属焊盘。 根据该方法，可以实现由于在制造CMOS图像传感器的过程中可能发生的焊盘腐蚀，外观缺陷和焊盘问题而先前报废的材料的正常输出。 结果，有利地，可以减少晶片废料并提高产品产率。