公开(公告)号：US20160013111A1

公开(公告)日：2016-01-14

申请号：US14737882

申请日：2015-06-12

Applicant: Industrial Technology Research Institute

Inventor： Hsiao-Fen WEI ,  Kun-Lin CHUANG

IPC: H01L23/28

CPC classification number: H01L51/5253

Abstract: A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and 0 atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.

Abstract translation: 公开了一种基板结构和使用其的器件。 本公开的实施例提供了包括柔性衬底和第一阻挡层的衬底结构。 柔性基板具有顶表面，侧表面和底表面。 第一阻挡层设置在柔性基板的顶表面上并与其接触，其中第一阻挡层由Si，N和Z原子组成，其中Z原子选自H，C和O原子， 并且其中第一阻挡层的Si以35至42原子％的量存在，第一阻挡层的N以10至52原子％的量存在，并且第一阻挡层的Z以存在的量 6〜48原子％。