公开(公告)号：US20230187319A1

公开(公告)日：2023-06-15

申请号：US18076538

申请日：2022-12-07

申请人： Infineon Technologies AG

发明人： Anita Herzer

IPC分类号： H01L23/482 ,  H01L21/56 ,  H01L23/10 ,  H01L21/304 ,  H01L21/52 ,  H01L23/42

CPC分类号： H01L23/4828 ,  H01L21/563 ,  H01L23/10 ,  H01L21/304 ,  H01L21/52 ,  H01L23/42

摘要： A method for fabricating a semiconductor device module includes: providing a substrate having one or more semiconductor dies disposed thereon; providing a housing; applying a reactive tape on partial surfaces of one or both of the substrate and the housing; mounting the housing onto the substrate; filling in a potting material into an interior of the housing; and curing the potting material and the reactive tape.