公开(公告)号：US20200294894A1

公开(公告)日：2020-09-17

申请号：US16354392

申请日：2019-03-15

Applicant: Infineon Technologies AG

Inventor： Rainer Pelzer ,  Fortunato Lopez ,  Antonia Maglangit ,  Siti Amira Faisha Shikh Zakaria

IPC: H01L23/495 ,  H01L23/532 ,  H01L21/48 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

公开(公告)号：US11031321B2

公开(公告)日：2021-06-08

申请号：US16354392

申请日：2019-03-15

Applicant: Infineon Technologies AG

Inventor： Rainer Pelzer ,  Fortunato Lopez ,  Antonia Maglangit ,  Siti Amira Faisha Shikh Zakaria

IPC: H01L23/495 ,  H01L21/768 ,  H01L21/48 ,  H01L23/532

Abstract: A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.