公开(公告)号：US20180061660A1

公开(公告)日：2018-03-01

申请号：US15249067

申请日：2016-08-26

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav Joshi ,  Kae-Horng Wang ,  Stefan Willkofer

IPC: H01L21/324 ,  H01L29/739 ,  H01L29/66 ,  H01L21/3213

Abstract: A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. The surface treatment process includes treating the surface with a reactive material. A material layer is formed over the treated barrier layer. The material layer comprises a metal.