公开(公告)号：US20190088604A1

公开(公告)日：2019-03-21

申请号：US15709102

申请日：2017-09-19

Applicant: Infineon Technologies AG

Inventor： Christian Bretthauer ,  Bernhard Laumer ,  Holger Poehle ,  Momtchil Stavrev

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor die includes a last metallization layer above a semiconductor substrate, a bond pad above the last metallization layer, a passivation layer covering part of the bond pad and having an opening that defines a contact area of the bond pad, an insulating region separating the bond pad from the last metallization layer at least in an area corresponding to the contact area of the bond pad, and an electrically conductive interconnection structure that extends from the bond pad to the upper metallization layer outside the contact area of the bond pad. Corresponding methods of manufacture are also provided.

公开(公告)号：US10249583B1

公开(公告)日：2019-04-02

申请号：US15709102

申请日：2017-09-19

Applicant: Infineon Technologies AG

Inventor： Christian Bretthauer ,  Bernhard Laumer ,  Holger Poehle ,  Momtchil Stavrev

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L23/31

Abstract: A semiconductor die includes a last metallization layer above a semiconductor substrate, a bond pad above the last metallization layer, a passivation layer covering part of the bond pad and having an opening that defines a contact area of the bond pad, an insulating region separating the bond pad from the last metallization layer at least in an area corresponding to the contact area of the bond pad, and an electrically conductive interconnection structure that extends from the bond pad to the upper metallization layer outside the contact area of the bond pad. Corresponding methods of manufacture are also provided.