公开(公告)号：US20200043562A1

公开(公告)日：2020-02-06

申请号：US16527619

申请日：2019-07-31

申请人： Infineon Technologies AG

发明人： Wolfgang LIEBL ,  Stefan ALMSTAETTER ,  Jens ARKENAU ,  Josef BOECK ,  Rainer LEUSCHNER ,  Gunther MACKH

IPC分类号： G11C17/10 ,  H03B5/02 ,  G11C17/14 ,  H01L23/525 ,  H01L21/3213

摘要： A method for programming a one-time programmable structure is disclosed. The method comprises producing an electrical circuit having the one-time programmable structure. The method furthermore comprises severing the one-time programmable structure by etching the one-time programmable structure in a separating region.

公开(公告)号：US20150017801A1

公开(公告)日：2015-01-15

申请号：US14474482

申请日：2014-09-02

申请人： Infineon Technologies AG

发明人： Gunther MACKH ,  Uwe SEIDEL ,  Rainer LEUSCHNER

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a substrate; forming a dielectric layer over the substrate; forming a first opening and a second opening at least partially simultaneously through the dielectric layer over the substrate; and forming a third opening through the bottom surface of the first opening and into at least a portion of the substrate.

摘要翻译： 一个或多个实施例涉及制造半导体结构的方法，包括：提供衬底; 在所述衬底上形成介电层; 形成第一开口和第二开口，所述第一开口和第二开口至少部分同时穿过所述基底上的介电层; 以及形成穿过所述第一开口的底表面并进入所述基底的至少一部分的第三开口。