公开(公告)号：US11081551B2

公开(公告)日：2021-08-03

申请号：US16548144

申请日：2019-08-22

申请人： Infineon Technologies AG

发明人： Christoph Glacer ,  Stephan Pindl ,  Werner Weber ,  Sebastian Wittmann

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/16 ,  H01L23/532 ,  B01D71/02 ,  H01L21/02

摘要： In accordance with an embodiment, a method for producing a graphene-based sensor includes providing a carrier substrate; forming a carrier structure on the carrier substrate, wherein one or more separating structures are formed on an upper side of the carrier structure; and performing a wet chemical transfer of a graphene layer onto the upper side of the carrier structure that comprises the separating structures, where the separating structures and a tear strength of the graphene layer are matched to one another such that the graphene layer respectively tears at the separating structures during the wet chemical transfer.

公开(公告)号：US20200066845A1

公开(公告)日：2020-02-27

申请号：US16548144

申请日：2019-08-22

申请人： Infineon Technologies AG

发明人： Christoph Glacer ,  Stephan Pindl ,  Werner Weber ,  Sebastian Wittmann

IPC分类号： H01L29/16 ,  H01L23/532

摘要： In accordance with an embodiment, a method for producing a graphene-based sensor includes providing a carrier substrate; forming a carrier structure on the carrier substrate, wherein one or more separating structures are formed on an upper side of the carrier structure; and performing a wet chemical transfer of a graphene layer onto the upper side of the carrier structure that comprises the separating structures, where the separating structures and a tear strength of the graphene layer are matched to one another such that the graphene layer respectively tears at the separating structures during the wet chemical transfer.