公开(公告)号：US10914018B2

公开(公告)日：2021-02-09

申请号：US16351116

申请日：2019-03-12

Applicant: Infineon Technologies AG

Inventor： Norbert Pielmeier ,  Chin Yung Lai ,  Swee Kah Lee ,  Muhammad Muhammat Sanusi ,  Evelyn Napetschnig ,  Nurfarena Othman ,  Siew Ching Seah

IPC: C25D7/12 ,  H01L23/495 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  C25D3/38

Abstract: A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 μm to 10 μm. A method of manufacturing a metal surface with such micropores also is described.

公开(公告)号：US20200291538A1

公开(公告)日：2020-09-17

申请号：US16351116

申请日：2019-03-12

Applicant: Infineon Technologies AG

Inventor： Norbert Pielmeier ,  Chin Yung Lai ,  Swee Kah Lee ,  Muhammad Muhammat Sanusi ,  Evelyn Napetschnig ,  Nurfarena Othman ,  Siew Ching Seah

IPC: C25D7/12 ,  H01L23/495 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  C25D3/38

Abstract: A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 μm to 10 μm. A method of manufacturing a metal surface with such micropores also is described.