公开(公告)号：US11302781B2

公开(公告)日：2022-04-12

申请号：US15951918

申请日：2018-04-12

Applicant: Infineon Technologies AG

Inventor： Joachim Weyers ,  Stefan Gamerith ,  Franz Hirler ,  Anton Mauder

IPC: H01L29/16 ,  H01L27/02 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A transistor structure is formed is the semiconductor body. A trench structure extends from the first surface into the semiconductor body. An electrostatic discharge protection structure is accommodated in the trench structure. The electrostatic discharge protection structure includes a first terminal region and a second terminal region. A source contact structure at the first surface is electrically connected to source regions of the transistor structure and to the first terminal region. A gate contact structure at the first surface is electrically connected to a gate electrode of the transistor structure and to the second terminal region.

公开(公告)号：US20180301537A1

公开(公告)日：2018-10-18

申请号：US15951918

申请日：2018-04-12

Applicant: Infineon Technologies AG

Inventor： Joachim Weyers ,  Stefan Gamerith ,  Franz Hirler ,  Anton Mauder

IPC: H01L29/16 ,  H01L27/02 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A transistor structure is formed is the semiconductor body. A trench structure extends from the first surface into the semiconductor body. An electrostatic discharge protection structure is accommodated in the trench structure. The electrostatic discharge protection structure includes a first terminal region and a second terminal region. A source contact structure at the first surface is electrically connected to source regions of the transistor structure and to the first terminal region. A gate contact structure at the first surface is electrically connected to a gate electrode of the transistor structure and to the second terminal region.