公开(公告)号：US20160307849A1

公开(公告)日：2016-10-20

申请号：US15095650

申请日：2016-04-11

Applicant: Infineon Technologies AG

Inventor： Thorsten Meyer ,  Stephan Senn

IPC: H01L23/532 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/40

CPC classification number: H01L23/53271 ,  H01L27/0922 ,  H01L29/407 ,  H01L29/66674 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7801 ,  H01L29/7811 ,  H01L29/7813

Abstract: The present disclosure relates to a semiconductor device, comprising a semiconductor substrate; a trench extending into the semiconductor substrate, wherein the trench is partly filled with an electrically conductive structure insulated from the semiconductor substrate; a polysilicon or amorphous silicon routing structure laterally bridging the trench; and an insulation layer between the trench and the routing structure.

Abstract translation: 本公开涉及一种半导体器件，包括半导体衬底; 延伸到所述半导体衬底中的沟槽，其中所述沟槽部分地填充有与所述半导体衬底绝缘的导电结构; 横向桥接沟槽的多晶硅或非晶硅布线结构; 以及沟槽和布线结构之间的绝缘层。