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公开(公告)号：US20250151634A1
公开(公告)日：2025-05-08
申请号：US18387505
申请日：2023-11-07
Applicant: Infineon Technologies AG
Inventor： Sven Schmidbauer , Matthias Markert , Steffen Müller
Abstract: A semiconductor device includes a semiconductor substrate, a phase change switching device formed over the semiconductor substrate and including a strip of phase change material connected between an RF input contact and an RF output contact, and a heating element thermally coupled to the strip of phase change material, and a silicon adhesion layer that forms a direct interface with a first surface of the strip of phase change material and separates the first surface from a dielectric material formed thereon.
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