公开(公告)号：US20230097353A1

公开(公告)日：2023-03-30

申请号：US17946471

申请日：2022-09-16

Applicant: Infineon Technologies AG

Inventor： Oliver BLANK ,  Tobias POLSTER ,  Sylvain LEOMANT

IPC: H01L21/78 ,  H01L21/762

Abstract: A method of processing a wafer is disclosed. In one example, the method comprises providing the wafer with a separation frame separating neighboured electronic components, forming separation trenches in the separation frame and at least partially lining sidewalls of the separation trenches with a sidewall lining for partially filling the separation trenches while maintaining a void volume therein. An exterior opening of the separation trenches is closed by a closing structure.