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1.发明申请公开(公告)号：US20190006513A1
公开(公告)日：2019-01-03
申请号：US16023433
申请日：2018-06-29
发明人： Cedric Ouvrard , Adam Amali , Oliver Blank , Michael Hutzler , David Laforet , Harsh Naik , Ralf Siemieniec , Li Juin Yip
摘要： A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
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公开(公告)号：US10727331B2
公开(公告)日：2020-07-28
申请号：US16023433
申请日：2018-06-29
发明人： Cedric Ouvrard , Adam Amali , Oliver Blank , Michael Hutzler , David Laforet , Harsh Naik , Ralf Siemieniec , Li Juin Yip
摘要： A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
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3.发明公开公开(公告)号：US20240047517A1
公开(公告)日：2024-02-08
申请号：US17882064
申请日：2022-08-05
IPC分类号： H01L29/06 , H01L29/78 , H01L29/10 , H01L29/40 , H01L21/265 , H01L21/266 , H01L29/66
CPC分类号： H01L29/0634 , H01L29/7813 , H01L29/1095 , H01L29/407 , H01L21/26513 , H01L21/266 , H01L29/66734 , H01L29/1608
摘要： A power semiconductor device includes: trench gate structures in an active cell region of a semiconductor substrate and extending into an inactive cell region of the semiconductor substrate that adjoins the active cell region; an electrically insulating material covering the trench gate structures; first contact openings in the electrically insulating material between adjacent trench gate structures in the active cell region; second contact openings in the electrically insulating material vertically aligned with the trench gate structures in the inactive cell region; first counter-doped regions between the adjacent trench gate structures in the active cell region and vertically aligned with the first contact openings; second counter-doped regions underneath the trench gate structures in the inactive cell region and vertically aligned with the second contact openings; first contacts in the first contact openings; and second contacts in the second contact openings. Methods of producing the power semiconductor device are also described.
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公开(公告)号：US11296218B2
公开(公告)日：2022-04-05
申请号：US15930806
申请日：2020-05-13
发明人： Ralf Siemieniec , Adam Amali , Michael Hutzler , Laszlo Juhasz , David Laforet , Cedric Ouvrard , Li Juin Yip
IPC分类号： H01L29/78 , H01L29/40 , H01L29/06 , H01L29/423
摘要： A semiconductor device includes a semiconductor body having first and second opposing surfaces, an active area including active transistor cells, and an edge termination region laterally surrounding the active area. Each active transistor cell includes a mesa and a columnar trench having a field plate. The edge termination region includes inactive cells each including a columnar termination trench having a field plate, and a termination mesa including a drift region of a first conductivity type. The edge termination region includes a transition region laterally surrounding the active region and an outer termination region laterally surrounding the transition region. In the transition region, the termination mesa includes a body region of a second conductivity type arranged on the drift region. In the outer termination region, the drift region extends to the first surface. A buried doped region of the edge termination region is positioned in the transition and outer termination regions.
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公开(公告)号：US20200328303A1
公开(公告)日：2020-10-15
申请号：US16911981
申请日：2020-06-25
发明人： Cedric Ouvrard , Adam Amali , Oliver Blank , Michael Hutzler , David Laforet , Harsh Naik , Ralf Siemieniec , Li Juin Yip
IPC分类号： H01L29/78 , H01L29/66 , H01L29/739 , H01L29/06 , H01L29/40
摘要： A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
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