公开(公告)号：US20240347223A1

公开(公告)日：2024-10-17

申请号：US18577566

申请日：2022-07-12

申请人： Infineon Technologies Austria AG ,  Eidgenössische Technische Hochschule - ETH Zürich ,  Universitat Innsbruck

发明人： Clemens Rössler ,  Silke Auchter ,  Gerald Stocker ,  Sokratis Sgouridis ,  Chiara Decaroli ,  Jonathan Home ,  Marco Valentini ,  Yves Colombe ,  Philip Holz

IPC分类号： G21K1/00

CPC分类号： G21K1/00

摘要： A device (100) for controlling trapped ions (180) includes a first semiconductor substrate (120) comprising a semiconductor and/or dielectric material. A first micro-fabricated electrode structure (125) is disposed at a main side of the first substrate (120). The device (100) further includes a second substrate (140) comprising a semiconductor and/or dielectric material. A second micro-fabricated electrode structure (145) is disposed at a main side of the second substrate (140) opposite the main side of the first substrate (120). A plurality of spacer members (160) is disposed between the first substrate (120) and the second substrate (140). At least one ion trap is configured to trap ions (180) in a space between the first substrate (120) and the second substrate (140). The first micro-fabricated electrode structure (125) and the second micro-fabricated electrode structure (145) comprise electrodes of the ion trap. A multi-layer metal interconnect (135) is formed on the first substrate (120) and electrically connected to the first micro-fabricated electrode structure (125).