公开(公告)号：US20040058559A1

公开(公告)日：2004-03-25

申请号：US10255015

申请日：2002-09-25

申请人： Infineon Technologies Richmond, LP

发明人： Shrinivas Govindarajan ,  Mukund Patel

IPC分类号： H01L021/31

CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/31625

摘要： A method for rapidly depositing a borosilicate glass film on a semiconductor wafer includes controlling the pressure within the chamber, introducing oxygen into the chamber, introducing a carrier gas into the chamber, injecting triethyl borate (nullTEBnull) and tetraethyl orthosilicate (nullTEOSnull) into the chamber, stabilizing the injection of TEB and TEOS, adjustably spacing a heater relative to the chamber, introducing ozone gas into the chamber, and depositing borosilicate glass film at a rate of at least about 4,500 angstroms per minute.