ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240126123A1

    公开(公告)日:2024-04-18

    申请号:US18243677

    申请日:2023-09-08

    CPC classification number: G02F1/13396 G02F1/13394 G02F1/13398 G02F1/1368

    Abstract: This disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a first substrate, a second substrate, a first supporting member and a plurality of second supporting members. The first supporting member and the second supporting members are disposed between the first substrate and the second substrate. The first supporting member includes a first bottom surface and a first top surface. The second supporting member is disposed adjacent to the first supporting member and includes a second bottom surface and a second top surface. The difference between the radius of the first bottom surface and the radius of the first top surface is defined as a first radius bias. The difference between the radius of the second bottom surface and the radius of the second top surface is defined as a second radius bias. The first radius bias is greater than the second radius bias.

    METHODS FOR MANUFACTURING ELECTRONIC DEVICE

    公开(公告)号:US20250098410A1

    公开(公告)日:2025-03-20

    申请号:US18805842

    申请日:2024-08-15

    Abstract: A method for manufacturing an electronic device is provided. The method includes providing a first substrate. The method further includes forming a bank layer on the first substrate. The bank layer includes a bank wall and a first opening, and the first opening adjacent to the bank wall. The method further includes forming a light conversion layer in the first opening. The method further includes forming a spacer on the bank wall. The method further includes providing a second substrate. The method further includes transferring a plurality of electronic units to the second substrate. The method further includes overlapping the first substrate and second substrate, so that the spacer is located between the first substrate and the second substrate.

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