公开(公告)号：US20230402525A1

公开(公告)日：2023-12-14

申请号：US18035663

申请日：2021-12-27

Applicant: Institute of Semiconductors, Guangdong Academy of Sciences

Inventor： Chengguo LI ,  Qiaoyu ZENG ,  Xuebing YIN ,  Xiaoming GE ,  Zhitao CHEN

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/06 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/0603 ,  H01L29/7786

Abstract: Embodiments of the present application relate to the technical field of semiconductors, and provide a manufacturing method for an N-polar GaN transistor structure and a semiconductor structure. A Ga-polar epitaxial functional layer is formed by depositing, a supporting substrate is formed on the epitaxial functional layer by bonding, after the epitaxial structure is inverted, a structural substrate and a buffer layer are removed, and a source, a drain, and a gate are manufactured on the side of the exposed epitaxial functional layer away from the supporting substrate, to form an N-polar GaN transistor structure.