公开(公告)号：US20200083135A1

公开(公告)日：2020-03-12

申请号：US16129243

申请日：2018-09-12

Applicant: Intel Corporation

Inventor： Johanna Swan ,  Feras Eid ,  Adel Eisherbini

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/42 ,  H01L21/48 ,  H01L23/00

Abstract: An integrated circuit structure may be formed having a substrate, at least one integrated circuit device embedded in and electrically attached to the substrate, and a heat dissipation device in thermal contact with the integrated circuit device, wherein a first portion of the heat dissipation device extends into the substrate and wherein a second portion of the heat dissipation device extends over the substrate. In one embodiment, the heat dissipation device may comprise the first portion of the heat dissipation device formed from metallization within the substrate.