公开(公告)号：US20240395695A1

公开(公告)日：2024-11-28

申请号：US18794584

申请日：2024-08-05

Applicant: Intel Corporation

Inventor： Aaron J. WELSH ,  Christopher M. PELTO ,  David J. TOWNER ,  Mark A. BLOUNT ,  Takayoshi ITO ,  Dragos SEGHETE ,  Christopher R. RYDER ,  Stephanie F. SUNDHOLM ,  Chamara ABEYSEKERA ,  Anil W. DEY ,  Che-Yun LIN ,  Uygar E. AVCI

IPC: H01L23/522

Abstract: Metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

公开(公告)号：US20220102343A1

公开(公告)日：2022-03-31

申请号：US17033440

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Anthony V. MULE' ,  David J. TOWNER ,  Dragos SEGHETE ,  Christopher R. RYDER ,  Angel AQUINO GONZALEZ

IPC: H01L27/088 ,  H01L23/538 ,  H01L29/417 ,  H01L29/78

Abstract: Multi-layer etch stop layers are described. In an example, an integrated circuit structure includes a conductive line in a first interlayer dielectric material above a substrate. A first dielectric etch stop layer, a second dielectric layer and a third dielectric layer are on the conductive line and the first interlayer dielectric material. A second interlayer dielectric material is on the third dielectric etch stop layer. An opening is in the second interlayer dielectric material, in the third dielectric etch stop layer, and in the second dielectric etch stop layer, in the first dielectric etch stop layer. A conductive structure is in the opening, the conductive structure in direct contact with the conductive line.

公开(公告)号：US20240395696A1

公开(公告)日：2024-11-28

申请号：US18797197

申请日：2024-08-07

Applicant: Intel Corporation

Inventor： Aaron J. WELSH ,  Christopher M. PELTO ,  David J. TOWNER ,  Mark A. BLOUNT ,  Takayoshi ITO ,  Dragos SEGHETE ,  Christopher R. RYDER ,  Stephanie F. SUNDHOLM ,  Chamara ABEYSEKERA ,  Anil W. DEY ,  Che-Yun LIN ,  Uygar E. AVCI

IPC: H01L23/522

Abstract: Metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

公开(公告)号：US20220068794A1

公开(公告)日：2022-03-03

申请号：US17129858

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Aaron J. WELSH ,  Christopher M. PELTO ,  David J. TOWNER ,  Mark A. BLOUNT ,  Takayoshi ITO ,  Dragos SEGHETE ,  Christopher R. RYDER ,  Stephanie F. SUNDHOLM ,  Chamara ABEYSEKERA ,  Anil W. DEY ,  Che-Yun LIN ,  Uygar E. AVCI

IPC: H01L23/522 ,  H01L49/02

Abstract: Metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.