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公开(公告)号：US20190035673A1
公开(公告)日：2019-01-31
申请号：US16077555
申请日：2016-03-31
Applicant: Intel Corporation
Inventor： Ebony L. Mays , Jeanne L. Luce , Elizabeth Mallon
IPC: H01L21/762 , H01L21/02 , H01L29/78
Abstract: An embodiment includes a semiconductor apparatus comprising: a trench with an aspect ratio of at least 7:1 (height:width); and a dielectric included in the trench; wherein the dielectric: (a) includes carbon and at least one of silicon nitride and silicon carbide, and (b) does not include an oxide. Other embodiments are described herein.
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