公开(公告)号：US20220415795A1

公开(公告)日：2022-12-29

申请号：US17358442

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Mohit Haran ,  Charles Wallace ,  Leanord Guler ,  Sukru Yemenicioglu ,  Mauro Kobrinsky ,  Tahir Ghani

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/40 ,  H01L29/66

Abstract: Back-side transistor contacts that wrap around a portion of source and/or drain semiconductor bodies, related transistor structures, integrated circuits, systems, and methods of fabrication are disclosed. Such back-side transistor contacts are coupled to a top and a side of the source and/or drain semiconductor and extend to back-side interconnects. Coupling to top and side surfaces of the source and/or drain semiconductor reduces contact resistance and extending the metallization along the side reduces transistor cell size for improve device density.