公开(公告)号：US10304681B2

公开(公告)日：2019-05-28

申请号：US15573458

申请日：2015-06-22

Applicant: Intel Corporation

Inventor： Chen-Guan Lee ,  Lu Yang ,  Joodong Park ,  Chia-Hong Jan

IPC: H01L29/78 ,  H01L21/225 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06

Abstract: Dual height glass is described for doping a fin of a field effect transistor structure in an integrated circuit. In one example, a method includes applying a glass layer over a fin of a FinFET structure, the fin having a source/drain region and a gate region, applying a polysilicon layer over the gate region, removing a portion of the glass layer from the source/drain region after applying the polysilicon, and thermally annealing the glass to drive dopants into the fin, and applying an epitaxial layer over the source/drain region.