公开(公告)号：US20220359030A1

公开(公告)日：2022-11-10

申请号：US17866715

申请日：2022-07-18

Applicant: Intel Corporation

Inventor： Yuanyuan Li ,  Rakan Maddah ,  Prashant S. Damle ,  Dany-Sebastien Ly-Gagnon ,  Lunkai Zhang

IPC: G11C29/10 ,  G11C29/12 ,  G11C29/18

Abstract: Systems, apparatuses, and methods provide for technology performs write current adjustment management in crosspoint persistent memory structures. Such technology determines whether to adjust a base current in response to a sampling of write-and-read operations on a set of addresses in a crosspoint persistent memory; determines whether a test current reduces a number of bit fails in response to a determination of whether to adjust the base current; and adjusts the base current based on the test current in response to a determination that the test current reduces the number of bit fails.