公开(公告)号：US20190088747A1

公开(公告)日：2019-03-21

申请号：US16198725

申请日：2018-11-21

Applicant: Intel Corporation

Inventor： Niti GOEL ,  Gilbert DEWEY ,  Niloy MUKHERJEE ,  Matthew V. METZ ,  Marko RADOSAVLIJEVIC ,  Benjamin CHU-KUNG ,  Jack T. KAVALIEROS ,  Robert S. CHAU

IPC: H01L29/205 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L29/20

Abstract: A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.