公开(公告)号：US20230065187A1

公开(公告)日：2023-03-02

申请号：US18047094

申请日：2022-10-17

Applicant: Intel Corporation

Inventor： John Hopkins ,  Nancy M. Lomeli

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

Abstract: Systems, apparatuses, and methods may provide for technology for forming extended air gaps for bitline contacts. For example, such technology patterns and etches a dielectric layer and a bitline layer to create bitline contacts in a memory die. An air gap dielectric layer is deposited to form an air gap between adjacent bitline contacts, and wherein the air gap has a height dimension that extends past a height dimension of the bitline contacts.