公开(公告)号：US20220406938A1

公开(公告)日：2022-12-22

申请号：US17353225

申请日：2021-06-21

Applicant: Intel Corporation

Inventor： Navid PAYDAVOSI

IPC: H01L29/78 ,  C22C14/00 ,  C22C27/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L29/417 ,  H01L29/423 ,  H01L29/06 ,  H01L29/40 ,  H01L27/092 ,  H01L21/8238

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, a semiconductor device comprises a semiconductor channel, a source region adjacent to the semiconductor channel, and a drain region adjacent to the semiconductor channel. In an embodiment, the source region and the drain region each comprise a trench, a conformal silicide lining the trench, and a binary metallic alloy filling the trench.

公开(公告)号：US20230095007A1

公开(公告)日：2023-03-30

申请号：US17485173

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Rishabh MEHANDRU ,  Stephen M. CEA ,  Aaron D. LILAK ,  Cory WEBER ,  Patrick KEYS ,  Navid PAYDAVOSI

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: Integrated circuit structures having metal-containing source or drain structures, and methods of fabricating integrated circuit structures having metal-containing source or drain structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, and a second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires. The first and second epitaxial source or drain structures include a metal species diffused therein, the metal species further diffused partially into the vertical arrangement of horizontal nanowires.