公开(公告)号：US20220093514A1

公开(公告)日：2022-03-24

申请号：US17542136

申请日：2021-12-03

Applicant: Intel Corporation

Inventor： Nita CHANDRASEKHAR ,  AKM Shaestagir CHOWDHURY

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/02 ,  H01L21/768

Abstract: An integrated circuit structure, comprises a dielectric material having an opening therein, the opening defined by sides and a bottom. A graphene barrier material is conformal to the sides and the bottom of the opening, and a conductive metal over the graphene barrier material that fills at least a portion of a remainder of the opening in the dielectric material. The graphene barrier is formed by applying a non-hydrogen based plasma pretreatment to the dielectric surface, including the sides and the bottom of the opening, to substantially remove any passivation and provide an activated dielectric surface. A carbon-based precursor is exposed to the activated dielectric surface at less than approximately 400° C. to form the graphene barrier.

公开(公告)号：US20230420361A1

公开(公告)日：2023-12-28

申请号：US17852028

申请日：2022-06-28

Applicant: Intel Corporation

Inventor： Nita CHANDRASEKHAR ,  Vishal TIWARI ,  AKM Shaestagir CHOWDHURY

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76879 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76822

Abstract: Embodiments disclosed herein include integrated circuit structures and methods of forming such structures. In an embodiment, an integrated circuit structure comprises a dielectric layer with a first surface and a second surface, and an opening through the dielectric layer. In an embodiment, the opening is defined by sidewalls. In an embodiment, a graphene liner contacts the first surface of the dielectric layer and the sidewalls of the opening. In an embodiment, a conductive material at least partially fills a remainder of the opening.

公开(公告)号：US20210305161A1

公开(公告)日：2021-09-30

申请号：US16833258

申请日：2020-03-27

Applicant: Intel Corporation

Inventor： Nita CHANDRASEKHAR ,  AKM Shaestagir CHOWDHURY

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02

Abstract: An integrated circuit structure, comprises a dielectric material having an opening therein, the opening defined by sides and a bottom. A graphene barrier material is conformal to the sides and the bottom of the opening, and a conductive metal over the graphene barrier material that fills at least a portion of a remainder of the opening in the dielectric material. The graphene barrier is formed by applying a non-hydrogen based plasma pretreatment to the dielectric surface, including the sides and the bottom of the opening, to substantially remove any passivation and provide an activated dielectric surface. A carbon-based precursor is exposed to the activated dielectric surface at less than approximately 400° C. to form the graphene barrier.