公开(公告)号：US20200098554A1

公开(公告)日：2020-03-26

申请号：US16481056

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Purushotham Kaushik MUTHUR SRINATH ,  Richard Kenneth BREWER ,  Deepak GOYAL

IPC: H01L21/027 ,  H01L21/265 ,  H01J37/31

Abstract: Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.