公开(公告)号：US20220173105A1

公开(公告)日：2022-06-02

申请号：US17676734

申请日：2022-02-21

Applicant: Intel Corporation

Inventor： Rohan K. BAMBERY ,  Walid M. HAFEZ ,  Mong-Kai WU

IPC: H01L27/092 ,  H01L21/8238 ,  H01L23/525

Abstract: Metal fuses and self-aligned gate edge (SAGE) architectures having metal fuses are described. In an example, an integrated circuit structure includes a plurality of semiconductor fins protruding through a trench isolation region above a substrate. A first gate structure is over a first of the plurality of semiconductor fins. A second gate structure is over a second of the plurality of semiconductor fins. A gate edge isolation structure is laterally between and in contact with the first gate structure and the second gate structure. The gate edge isolation structure is on the trench isolation region and extends above an uppermost surface of the first gate structure and the second gate structure. A metal fuse is on the gate edge isolation structure.

公开(公告)号：US20200266194A1

公开(公告)日：2020-08-20

申请号：US16347183

申请日：2016-12-23

Applicant: Intel Corporation

Inventor： Rohan K. BAMBERY ,  Walid M. HAFEZ ,  Mong-Kai WU

IPC: H01L27/092 ,  H01L21/8238 ,  H01L23/525

Abstract: Metal fuses and self-aligned gate edge (SAGE) architectures having metal fuses are described. In an example, an integrated circuit structure includes a plurality of semiconductor fins protruding through a trench isolation region above a substrate. A first gate structure is over a first of the plurality of semiconductor fins. A second gate structure is over a second of the plurality of semiconductor fins. A gate edge isolation structure is laterally between and in contact with the first gate structure and the second gate structure. The gate edge isolation structure is on the trench isolation region and extends above an uppermost surface of the first gate structure and the second gate structure. A metal fuse is on the gate edge isolation structure.