公开(公告)号：US11270995B2

公开(公告)日：2022-03-08

申请号：US16483641

申请日：2017-03-05

Applicant: Intel Corporation

Inventor： Sang-Won Park ,  Dennis G. Hanken ,  Sishir Bhowmick ,  Leonard C. Pipes

IPC: H01L21/76 ,  H01L27/088 ,  H01L21/02

Abstract: Disclosed herein are techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device, prior to deposition of additional dielectric material, and the resulting assembly may be treated to form a dielectric layer around the structure.

公开(公告)号：US20220139913A1

公开(公告)日：2022-05-05

申请号：US17577834

申请日：2022-01-18

Applicant: Intel Corporation

Inventor： Sang-Won Park ,  Dennis G. Hanken ,  Sishir Bhowmick ,  Leonard C. Pipes

IPC: H01L27/088 ,  H01L21/02

Abstract: Disclosed herein are techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device, prior to deposition of additional dielectric material, and the resulting assembly may be treated to form a dielectric layer around the structure.