公开(公告)号：US11621354B2

公开(公告)日：2023-04-04

申请号：US16122284

申请日：2018-09-05

申请人： Intel Corporation

发明人： Mauro J. Kobrinsky ,  Stephanie Bojarski ,  Babita Dhayal ,  Biswajeet Guha ,  Tahir Ghani

IPC分类号： H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/78

摘要： Integrated circuit structures having partitioned source or drain contact structures, and methods of fabricating integrated circuit structures having partitioned source or drain contact structures, are described. For example, an integrated circuit structure includes a fin. A gate stack is over the fin. A first epitaxial source or drain structure is at a first end of the fin. A second epitaxial source or drain structure is at a second end of the fin. A conductive contact structure is coupled to one of the first or the second epitaxial source or drain structures. The conductive contact structure has a first portion partitioned from a second portion.

公开(公告)号：US11329162B2

公开(公告)日：2022-05-10

申请号：US16122277

申请日：2018-09-05

申请人： Intel Corporation

发明人： Mauro J. Kobrinsky ,  Stephanie Bojarski ,  Myra McDonnell ,  Tahir Ghani

IPC分类号： H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238

摘要： Integrated circuit structures having differentiated neighboring partitioned source or drain contact structures are described. An integrated circuit structure includes a first gate stack over a first fin, and a second gate stack over a second fin. First and second epitaxial source or drain structures are at first and second ends of the first fin. Third and fourth epitaxial source or drain structures are at first and second ends of the second fin. A first conductive contact structure is coupled to one of the first or the second epitaxial source or drain structures, and has a first portion partitioned from a second portion. A second conductive contact structure is coupled to one of the third or the fourth epitaxial source or drain structures, and has a first portion partitioned from a second portion. The second conductive contact structure is neighboring the first conductive contact structure and has a composition different than a composition of the first conductive contact structure.