公开(公告)号：US20220310601A1

公开(公告)日：2022-09-29

申请号：US17211745

申请日：2021-03-24

Applicant: Intel Corporation

Inventor： Aaron D. LILAK ,  Cory WEBER ,  Stephen M. CEA ,  Leonard C. PIPES ,  Seahee HWANGBO ,  Rishabh MEHANDRU ,  Patrick KEYS ,  Jack YAUNG ,  Tzu-Min OU

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78

Abstract: Fin doping, and integrated circuit structures resulting therefrom, are described. In an example, an integrated circuit structure includes a semiconductor fin. A lower portion of the semiconductor fin includes a region having both N-type dopants and P-type dopants with a net excess of the P-type dopants of at least 2E18 atoms/cm3. A gate stack is over and conformal with an upper portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.