公开(公告)号：US20230395697A1

公开(公告)日：2023-12-07

申请号：US17831800

申请日：2022-06-03

Applicant: Intel Corporation

Inventor： Nicole K. Thomas ,  Munzarin F. Qayyum ,  Marko Radosavljevic ,  Cheng-Ying Huang ,  Willy Rachmady ,  Rohit Galatage ,  Jami A. Wiedemer ,  David Bennett ,  Dincer Unluer ,  Venkata Aditya Addepalli

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L21/8238

CPC classification number: H01L29/66545 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0669 ,  H01L21/823807

Abstract: A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. The body can be, for instance, a nanoribbon, nanosheet, or nanowire. In an example, the second device comprises (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the second device lacks a continuous body extending laterally from the second source region to the second drain region.