公开(公告)号：US20250063798A1

公开(公告)日：2025-02-20

申请号：US18233966

申请日：2023-08-15

Applicant: Intel Corporation

Inventor： Yuri Rozenfeld ,  Yishai Eilat ,  Elham Mohammadi ,  Naor Roi Shay ,  Anna Nazimov

IPC: H01L29/417 ,  H01L27/02 ,  H01L27/088 ,  H01L29/78

Abstract: A transistor device can include a drain contact operably connected to a drain finger and a source contact operably connected to a source finger. The transistor device can further include diffusion area connected to the drain finger and the source finger to provide current to the drain finger and the source finger. The drain finger can have a length extending along an axis and different drain finger widths along the drain finger length such that current density is equal at each point along the drain finger length. The source finger can have a length extending along the axis and source finger widths along the source finger length such that current density is equal at each point along the source finger length.