Patent search ap:("International Business Machines Corporation") AND inv:"Christopher Gerard Murphy" Page 1

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发明申请
SECOND-LEVEL METALLIZATION TESTABLE FULLY INTEGRATED AND MULTI-FUNCTIONAL STATIC RANDOM ACCESS MEMORY AND SCANNABLE LATCHES 有权

公开(公告)号：US20250169050A1

公开(公告)日：2025-05-22

申请号：US18512140

申请日：2023-11-17

Applicant: International Business Machines Corporation

Inventor： Rajiv Joshi , Sam Storino , Christopher Gerard Murphy , Shirin Akter , Ishtiaq Ahsan , Leon Sigal

IPC: H10B10/00 , H01L21/66

Abstract: A static random access memory (SRAM) structure is provided and includes a wafer including a first metallization (M1) layer and a second metallization (M2) layer on which the M1 layer is disposed and a fully functional SRAM cell including circuitry using a maximum of two of the M1 layer and the M2 layer.

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